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| WTC2309 P-Channel Enhancement Mode Power MOSFET 1 GATE SOURCE 3 DRAIN DRAIN CURRENT -3.7 AMPERES DRAIN SOURCE VOLTAGE -30 VOLTAGE 2 Features: *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <75m @V GS =-10V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package 3 1 2 SOT-23 ( Maximum Ratings(TA=25 Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 ,(TA=25C) ,(TA=70C) Pulsed Drain Current 1,2 Unless Otherwise Specified) Symbol VDS VGS ID I DM PD R JA TJ , Tstg Value -30 20 -3.7 -3.0 -12 1.38 90 -55~+150 Unit V A Total Power Dissipation(TA=25C) Maximum Thermal Resistance Junction-ambient 3 Operating Junction and Storage Temperature Range W C/W C Device Marking WTC2309=2309 http:www.weitron.com.tw WEITRON 1/6 23-May-05 WTC2309 Electrical Characteristics (TA = 25 Characteristic Unless otherwise noted) Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS =0,I D =-250A Gate-Source Threshold Voltage VDS =VGS ,I D =-250 A Gate-Source Leakage Current VGS = 20V Drain- Sou rce Leakage Current(Tj=25C) VDS =-30V,V GS =0 Drain- Sou rce Leakage Current(Tj=55C) VDS =-24V,V GS =0 Drain-Source On-Resistance 2 VGS =-10V,I D=-3.0A VGS =-4.5V,I D=-2.6A Forward Transconductance VDS =-10V, ID =-3A g fs R DS(o n) 5.0 75 120 m I DSS -25 V(BR)DSS VGS(Th) I GSS -30 -1.0 V -3.0 100 -1 A nA S Dynamic Input Capacitance VGS =0V,VDS =-25V,f=1.0MHz Output Capacitance VGS =0V,VDS =-25V,f=1.0MHz Reverse Transfer Capacitance VGS =0V,VDS =-25V,f=1.0MHz C iss C oss C rss 412 91 62 660 pF http:www.weitron.com.tw WEITRON 2/6 23-May-05 WTC2309 Switching Turn-on Delay Time 2 VDS=-15V,VGS=-10V,I D=-1A,R D=15 ,R G=3.3 Rise Time VDS=-15V,VGS=-10V,I D=-1A,R D=15 ,R G=3.3 Turn-off De lay Time VDS=-15V,VGS=-10V,I D=-1A,R D=15 ,R G=3.3 Fall Time VDS=-15V,VGS=-10V,I D=-1A,R D=15 ,R G=3.3 Total Gate Charge 2 VDS=-24V,VGS=-4.5V,ID=-3A Gate-Source C harge VDS=-24V,VGS=-4.5V,ID=-3A Gate-Drain C hange VDS=-24V,VGS=-4.5V,ID=-3A t d (on) 8 5 20 7 5 1 3 ns t d (off) 8 nC tr tf Qg Q gs Q gd Source-Drain Diode Characteristics Forward On Voltage 2 VGS =0V,IS=-1.2A VSD - 20 15 - 1.2 - V ns nC Reverse Recovery Time2 VGS =0V,IS=-3.0A,dl/dt=100A/s Reverse Recovery Charge VGS =0V,IS=-3.0A,dl/dt=100A/s T rr Q rr Note: 1. Pulse width limited by Max, junction temperature. 2. pulse width300s, duty cycle2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 270/W when mounted on min, copper pad. http:www.weitron.com.tw WEITRON 3/6 23-May-05 WTC2309 45 40 45 TA=25C -10V -7.0V 40 TA=150C -10V -7.0V -I D ,DRAIN CURRENT (A) 30 25 20 15 10 -5.0V -4.5V I ,Drain Current (A) 35 35 30 25 20 15 10 -5.0V -4.5V VG= -3.0V 5 0 0 2 4 6 8 10 5 0 0 2 4 6 VG= -3.0V FIG.1 Typical Output Characteristics 105 1.6 -V DS ,DRAIN-TO-SOURCE VOLTAGE(V) Fig.2 Typical Output Characteristics -VDS ,Drain-to-source Voltage(V) 8 10 95 I D = -2.6A TA = 25C Normalized RDs(on) 1.4 I D = 3A VG = 10V 85 1.2 RDS(ON) (m) 75 1.0 65 0.8 55 1 Fig.3 On-Resistance v.s. Gate Voltage 3 1.3 -VGS ,Gate-to-source Voltage(V) 3 5 7 9 0.6 -50 0 50 100 150 Fig.4 Normalized On-Resistance Tj ,Junction Temperature(C) 2 Normalized-VGS(th)(V) 1.2 Tj = 150C 1.1 Tj = 25C - Is(A) 1 0.9 0 0 0.2 Fig.5 Forward Characteristics of Reverse Diode -VDS ,Source-to-Drain Voltage(V) 0.4 0.6 0.8 1 0.7 -50 Fig.6 Gate Threshold Voltage v.s. Junction Temperature Tj ,Junction Temperature(C) 0 50 100 150 WEITRON http://www.weitron.com.tw 4/6 23-May-05 WTC2309 12 1000 -VGS , Gate to Source Voltage(V) 10 8 6 4 2 0 I D = -3A VDS = -24V f = 1.0MHz Ciss C(pF) 100 Coss Crss 0 2 4 6 8 10 1 5 9 13 17 21 25 29 Fig 7. Gate Charge Characteristics 100 Q G , Total Gate Charge(nC) -VDS, Drain-to-Source Voltage(V) Fig 8. Typical Capacitance Characteristics 1 Duty factor = 0.5 0.2 0.1 0.1 0.05 0.01 10 -I D(A) 1 1ms 10ms Normalized Thermal Response(R ja ) PDM t T 0.01 0.1 TA = 25C Single Pulse 0.01 0.1 1 10 100ms Is DC 100 Single pulse Duty factor = t / T Peak Tj=PDM x R ja + Ta R ja=270C / W 0.01 0.1 1 10 100 1000 0.001 0.0001 0.001 Fig 9. Maximum Safe Operation Area VDS 90% -VDS , Drain-to-Source Voltage(V) Fig 10. Effective Transient Thermal Impedance VG QG -4.5V t, Pulse Width(s) QGS 10% QGD VGS td(on) tr td(off) tf Charge Q Fig.11 Switching Time Waveform Fig.12 Gate Charge Waveform WEITRON http://www.weitron.com.tw 5/6 23-May-05 WTC2309 SOT-23 Outline Dimension SOT-23 A TOP VIEW D E G H B C K J L M Dim A B C D E G H J K L M Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 WEITRON http://www.weitron.com.tw 6/6 23-May-05 |
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